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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 958-966

Optical properties of InP self-assembled quantum dots studied by imaging and single dot spectroscopy

(4) Sugisaki, Mitsuru a,b Ren, Hong Wen a,c Nishi, Kenichi a,d Masumoto, Yasuaki a,e

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b UNIVERSITY OF TORONTO (Canada)

c APPLIED OPTOELECTRONICS INC (United States)

d NEC CORPORATION (Japan)

e UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Fluorescence intermittency; InP; Micro photoluminescence; Self assembled quantum dot; Single dot spectroscopy; Thermal activation

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; EXCITONS; FLUORESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS;

SINGLE DOT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036478555 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.958 Document Type: Conference Paper

Times cited : (16)

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