Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 23, 2001, Pages

  Joyce, P B ^a   Krzyzewski, T J ^a   Bell, G R ^a   Jones, T S ^a   Le Ru, E C ^a   Murray, R ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; INDIUM;

ARTICLE; ATOMIC FORCE MICROSCOPY; GROWTH RATE; LUMINESCENCE; QUANTUM MECHANICS; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

EID: 0035894089     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.235317     Document Type: Article

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