InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications

Brazilian Journal of Physics

Volumn 36, Issue 2 A, 2006, Pages 405-407

  Lamas, T E ^a   Quivy, A A ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

InAs quantum dots; InGaAs quantum well; Molecular beam epitaxy

Indexed keywords

EID: 33746038146     PISSN: 01039733     EISSN: 01039733     Source Type: Journal    
DOI: 10.1590/S0103-97332006000300046     Document Type: Conference Paper

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