Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

Applied Physics Letters

Volumn 85, Issue 4, 2004, Pages 567-569

  Chia, C K ^a   Chua, S J ^a,b   Miao, Z L ^a   Chye, Y H ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DIFFUSION; CHIRPING EFFECT; REDSHIFT; SHUTTER CONTROL TIMING;

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4043160481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773914     Document Type: Article

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