Effects of growth interruption during growth of InAs wetting layer on formation of InAs quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 2925-2928

  Morishita, Yoshitaka ^a   Osada, Koh ^a   Hasegawa, Tomoaki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Growth interruption; InAs; Molecular beam epitaxy; Quantum dot; Stranski Krastanov growth mode

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (SPECIFIC GRAVITY); HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRESS RELAXATION;

GROWTH INTERRUPTION; INAS; SELF-ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOV GROWTH MODE;

SEMICONDUCTOR GROWTH;

EID: 22544450791     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2925     Document Type: Article

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