Progress and prospect of quantum dot lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4580, Issue , 2001, Pages 179-185

  Arakawa, Yasuhiko ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT ABSORPTION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICA;

CONTINUUM ABSORPTION; NEAR-FIELD PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; QUANTUM DOT LASER; SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 0035776829     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.444959     Document Type: Conference Paper

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