Electrical characterization of p -type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Fichtenbaum, N A ^a   Schaake, C ^a   Mates, T E ^a   Cobb, C ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CARRIER CONCENTRATIONS; GROWTH CONDITIONS; P-N DIODES;

GALLIUM NITRIDE;

EID: 35549007563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800304     Document Type: Article

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