Electrical characterization of MOS capacitors with SiO 2-TiO 2 dielectric stack made by room temperature plasma oxidation

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 2004, Pages 175-178

  Baez H ^a   Estrada, M ^a   Tinoco, J C ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYERS; DIELECTRIC STACKS; PLASMA OXIDATION; STACKED LAYERS;

CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; PERMITTIVITY; PLASMAS; SAMPLING; SILICA; TITANIUM DIOXIDE;

MOS CAPACITORS;

EID: 28444478317     PISSN: 15416275     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 2 in Direct-Tunneling Regime," IRW Final Report, 1997 IEEE International, pp. 56-61, Oct. 1997.
2. J.C. Tinoco, M. Estrada and G. Romero, "Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers," Microelectronics Reliability 43 (2003) 895-903
3. th International Conference in Microelectronic MIEL-2004. May 2004.
4. M. Depas, B. Vermiere, R.L. Van Meirhaeghe and M.M. Heyns, "Determination of tunneling parameters in ultra thin oxide layers Poly-Si/SiCySi structures," Solid State Electronics vol. 38, No. 8, pp. 1465-1471, (1995).