Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 999-1003

  Iwamoto, Kunihiko ^a   Mizubayashi, Wataru ^b   Ogawa, Arito ^a   Nabatame, Toshihide ^a   Satake, Hideki ^a   Toriumi, Akira ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Gate leakage current; HfO2; High k dielectrics; SiO2; Time to breakdown

Indexed keywords

ANNEALING; DIFFUSION; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PERMITTIVITY; SILICA;

GATE LEAKAGE CURRENT; HFO2; HIGH-K DIELECTRICS; TIME-TO-BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 33745820015     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.013     Document Type: Article

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