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Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 25-28

Effects of base oxide in HfSiO/SiO2 high-k gate stacks

(8) Wu, W H a Chen, M C a Wang, M F b Hou, T H b Yao, L G b Jin, Y b Chen, S C b Liang, M S b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; POLYSILICON; RELIABILITY; SILICA; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE CONTROL;

CHANNEL MOBILITY; DIELECTRIC BREAKDOWN; GATE LEAKAGE; HIGH-K GATE STACKS;

GATES (TRANSISTOR);

EID: 14844300098 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

References (6)

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2
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4
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.