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Volumn 92, Issue 6, 2008, Pages

Enhanced green laser activation by antireflective gate structures in panel transistors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; GATE DIELECTRICS; LASER EXCITATION; MICROSTRUCTURE; POLYSILICON; SILICA;

EID: 39349098952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2842417     Document Type: Article
Times cited : (19)

References (21)
  • 2
    • 39349099460 scopus 로고    scopus 로고
    • U.S. Patent No. 6703279 (March 7).
    • B. S. Lee, U.S. Patent No. 6703279 (March 7, 2004).
    • (2004)
    • Lee B., S.1
  • 12
    • 33645607953 scopus 로고
    • JAPIAU 0021-8979 10.1063/1.351809.
    • S. Luan and G. W. Neudeck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351809 72, 766 (1992).
    • (1992) J. Appl. Phys. , vol.72 , pp. 766
    • Luan, S.1    Neudeck, G.W.2
  • 15
    • 0001212787 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.363002.
    • K. Y. Choi and M. K. Han, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363002 80, 1883 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 1883
    • Choi, K.Y.1    Han, M.K.2
  • 16


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.