Effect of silicon thickness on the degradation mechanisms of sequential laterally solidified polycrystalline silicon TFTs during hot-carrier stress

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 181-184

  Voutsas, A T ^a   Kouvatsos, D N ^b   Michalas, L ^c   Papaioannou, G J ^c  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c UNIVERSITY OF ATHENS   (Greece)

Author keywords

Liquid crystal displays (LCDs); Semiconductor device Breakdown; Semiconductor device reliability; Thin film transistors (TFTs)

Indexed keywords

AGING OF MATERIALS; DEGRADATION; HOT CARRIERS; LIQUID CRYSTAL DISPLAYS; POLYSILICON; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SOLIDIFICATION;

SEMICONDUCTOR DEVICE BREAKDOWN; SEMICONDUCTOR DEVICE RELIABILITY;

THIN FILM TRANSISTORS;

EID: 15544371310     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.843212     Document Type: Article

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