High performance poly-si TFTs on a glass by a stable scanning CW laser lateral crystallization

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 747-750

  Hara, Akito ^a   Mishima, Yasuyoshi ^a   Kakehi, Tatsuya ^a   Takeuchi, Fumiyo ^a   Takei, Michiko ^a   Yoshino, Kenichi ^a   Suga, Katsuyuki ^a   Chida, Mitsuru ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; EXCIMER LASERS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOSFET DEVICES; NUCLEATION; POLYSILICON; RAMAN SPECTROSCOPY; SOLID STATE LASERS;

EXCIMER LASER CRYSTALLIZATION; FIELD EFFECT MOBILITY; FULL WIDTH AT HALF MAXIMUM; GLASS SUBSTRATE; HIGH PERFORMANCE POLYSILICON THIN FILM TRANSISTORS; LINE BEAM; OVERLAP SCANNING; SEQUENTIAL LATERAL SOLIDIFICATION; STABLE SCANNING CONTINUOUS WAVE LASER LATERAL CRYSTALLIZATION; SYSTEM ON GLASS;

THIN FILM TRANSISTORS;

EID: 0035716646     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)