Trap-state density in continuous-wave laser-crystallized single-grainlike silicon transistors

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Lin, Yu Ting ^a   Chen, Chih ^a   Shieh, Jia Min ^b   Lee, Yao Jen ^b   Pan, Ci Ling ^a   Cheng, Ching Wei ^c   Peng, Jian Ten ^c   Chao, Chih Wei ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Low Temp Poly Silicon Technology Division   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); ELECTRON MOBILITY; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

DEEP-STATE DENSITY; FIELD-EFFECT ELECTRON MOBILITY; SILICON TRANSISTORS; TRAP-STATE DENSITIES;

THIN FILM TRANSISTORS;

EID: 33745018575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209198     Document Type: Article

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