Enhanced hole mobility and reliability of panel epi-like silicon transistors using backside green laser activation

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 790-792

  Lin, Yu Ting ^a   Shieh, Jia Min ^b   Chen, Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Backside green laser activation; Continuous wave (CW) laser crystallization (CLC); Epi like Si transistors

Indexed keywords

ACTIVATED DEVICES; BACKSIDE GREEN LASER ACTIVATION; CONTINUOUS-WAVE (CW) LASER CRYSTALLIZATION (CLC); CONTINUOUS-WAVE LASERS; EPI-LIKE SI TRANSISTORS; GATE STRUCTURES; GLASS PANELS; GRAIN DEFECTS; GREEN-LASER IRRADIATIONS; INTERFACE DEFECTS; SILICON TRANSISTORS; THERMALLY ACTIVATED;

CRYSTALLIZATION; HOLE MOBILITY; SILICON; TRANSISTORS;

LASERS;

EID: 39349097003     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902984     Document Type: Article

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