Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4780-4782

  Peng, Du Zen ^a   Chang, Ting Chang ^b   Zan, Hsiao Wen ^a   Huang, Tiao Yuan ^a   Chang, Chun Yen ^a   Liu, Po Tsun ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DEGRADATION RATE; LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; ON/OFF CURRENT RATIO; POLY-SI TFTS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; SUBTHRESHOLD SWING; TRAP STATE DENSITY;

DEGRADATION; FURNACES; POLYSILICON; RELIABILITY;

THIN FILM TRANSISTORS;

EID: 79956038310     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489096     Document Type: Article

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