High-Performance Laser-Processed Polysilicon Thin-Film Transistors

IEEE Electron Device Letters

Volumn 20, Issue 2, 1999, Pages 77-79

  Giust, G K ^a,b   Sigmon, T W ^a,c   Boyce, J B ^d   Ho, J ^d  

^a Arizona State University   (United States)

^b AGERE SYSTEMS   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); HYDROGENATION; MASKS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

HYDROGENATED LASER-PROCESSED POLYSILICON THIN FILM TRANSISTORS; SELF-ALIGNED ALUMINUM TOP-GATE PROCESSES;

THIN FILM TRANSISTORS;

EID: 0033080096     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.740657     Document Type: Article

References (8)

1. F. Plais, P. Legagneux, C. Reita, O. Huet, F. Petinot, D. Pribat, B. Godard, M. Stehle, and E. Fogarassy, "Low-temperature polysilicon TFT's: A comparison of solid phase and laser crystallization," Microelectron. Eng., vol. 28, pp. 443-446, 1995.
2. K. Shimizu, O. Sugiura, and M. Matsumura, "On-chip bottom-gate polysilicon and amorphous silicon thin-fim transistors using excimer laser annealing," Jpn. J. Appl. Phys., vol. 29, pp. L1775-L1777, 1990.
3. _, "On-chip bottom-gate polysilicon and amorphous silicon thin-film transistors using excimer laser annealing," Jpn. J. Appl. Phys., vol. 29, no. 10, pp. L1775-L1777, 1990.
4. I.-W. Wu, "Polycrystalline silicon thin film transistors for liquid crystal displays," Solid State Phenomena, vol. 37-38, pp. 553-564, 1994.
5. G. K. Giust and T. W. Sigmon, "Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping," IEEE Electron Device Lett., vol. 18, pp. 394-396, 1997.
6. _, "High-performance thin-film transistors fabricated using excimer-laser processing and grain engineering," IEEE Trans. Electron Devices, vol. 45, pp. 925-932, 1998.
7. I. W. Wu, A. G. Lewis, T. Y. Huang, and A. Chiang, "Effects of trapstate density reduction by plasma hydrogenation in low-temperature polysilicon TFT," IEEE Electron Device Lett., vol. 10, pp. 123-125, 1989.
8. J. G. Fossum, A. Oritz-Conde, H. Shichijo, and S. K. Banerjee, "Anomalous leakage current in LPCVD polysilicon MOSFET's," IEEE Trans. Electron Devices, vol. ED-32, pp. 1878-1884, 1985.