Capping layer on thin Si film for μ-Czochralski process with excimer laser crystallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4340-4343

  Vikas, Rana ^a   Ishihara, Ryoichi ^a   Hiroshima, Yasushi ^b   Abe, Daisuke ^b   Inoue, Satoshi ^b   Shimoda, Tatsuya ^b   Metselaar, Wim ^a   Beenakker, Kees ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Czochralski process; Capping layer; Location controlled grain; Thin film transistor and field effect mobility

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; GATES (TRANSISTOR); GRAIN GROWTH; SILICON;

Μ-CZOCHRALSKI PROCESS; CAPPING LAYER; LOCATION CONTROLLED GRAIN; THIN FILM TRANSISTOR AND FIELD EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 33744483396     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4340     Document Type: Article

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