Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 137-140

  Jun, Myungsim ^a   Jang, Moongyu ^a   Kim, Yarkeon ^a   Choi, Cheljong ^a   Kim, Taeyoub ^a   Oh, Soonyoung ^a   Lee, Seongjae ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; ELECTRON TRAPS; ERBIUM COMPOUNDS; SILICON; THERMIONIC EMISSION;

BARRIER HEIGHTS; ERBIUM SILICIDE; REVERSE-BIAS CONDITION;

SCHOTTKY BARRIER DIODES;

EID: 38849135668     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2825172     Document Type: Article

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