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Volumn 46, Issue 9, 2002, Pages 1283-1287

Analysis of reverse current-voltage characteristics of Schottky diodes based on phonon-assisted tunneling including Frenkel emission mechanism

Author keywords

Frenkel emission; Phonon assisted tunneling; Schottky diodes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PHONONS; SEMICONDUCTOR JUNCTIONS; THIN FILM TRANSISTORS;

EID: 0036721828     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00070-9     Document Type: Article
Times cited : (8)

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    • Singh, A.1    Cova, P.2    Masut, R.A.3
  • 12
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    • (1991) J Appl Phys , vol.69 , Issue.5 , pp. 3351-3353
    • Aboelfotoh, M.O.1
  • 14
    • 3342986527 scopus 로고
    • Electron transport at metal-semiconductor interfaces:general theory
    • (1992) Phys Rev B , vol.45 , Issue.23 , pp. 13509-13523
    • Tung, R.T.1
  • 28
    • 26344462977 scopus 로고
    • On prebreak phenomena in insulators and electronic semiconductors
    • (1938) Phys Rev , vol.54 , Issue.8 , pp. 647-648
    • Frenkel, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.