SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 102, Issue , 1996, Pages 173-177

Photoelectric and electrical responses of several erbium suicide/silicon interfaces

(5) Muret, P a Nguyen, T T A a Frangis, N b Van Tendeloo, G b Van Landuyt, J b

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b UNIVERSITY OF ANTWERP (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CURRENT MEASUREMENT; ELECTRON MICROSCOPY; ENERGY GAP; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; FERMI LEVEL; INTERFACES (MATERIALS); PHOTOELECTRICITY; SCHOTTKY BARRIER DIODES; SILVER; SUBSTRATES;

CONDUCTION BAND EDGE; PHOTOCURRENT MEASUREMENTS; PHOTON ENERGY; SCHOTTKY BARRIER HEIGHTS; SILICON DEPLETION ZONE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030564868 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00042-6 Document Type: Article

Times cited : (3)

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