Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 82-85

  Jun, Myungsim ^a   Jang, Moongyu ^a   Kim, Yarkyeon ^a   Choi, Cheljong ^a   Kim, Taeyoub ^a   Park, Byungchul ^a,b   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; ELECTRON TRAPS; EQUIVALENT CIRCUITS; ERBIUM COMPOUNDS;

ERBIUM SILICIDE; INTERFACE TRAP STATES; REVERSE BIAS CONDITION; TRAP DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 34047102531     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2406066     Document Type: Article

References (17)

1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
2. H. Hasegawa, Jpn. J. Appl. Phys., Part 1 38, 1098 (1999).
3. H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. 99, 023703 (2006).
4. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and Patrick Chye, Phys. Rev. Lett. 44, 420 (1980).
5. W. Monch, Rep. Prog. Phys. 53, 221 (1990).
6. J. Tersoff, Phys. Rev. B 30, 4874 (1984).
7. R. T. Tung, Mater. Sci. Eng., R. 35, 1 (2001).
8. Zs. J. Horvath, M. Adam, I. Szabo, M. Serenyi, and Vo Van Tuyen, Appl. Surf. Sci. 190, 441 (2002).
9. C. Barret, F. Chekir, and A. Vapaille, J. Phys. C 16, 2421 (1983).
10. P. S. Ho, E. S. Yang, H. L. Evans, and X. Wu, Phys. Rev. Lett. 56, 177 (1986).
11. J. Werner, K. Ploog, and H. J. Queisser, Phys. Rev. Lett. 57, 1080 (1986).
12. J. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar, and M. Pinto, Phys. Rev. Lett. 60, 53 (1988).
13. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
14. M. Jang, Y. Kim, J. Shin, and S. Lee, IEEE Electron Device Lett. 26, 354 (2005).
15. Dieter K. Schroder, Semiconductor Material and Device Characterization (Wiley-Interscience, New York, 1990).
16. Liviu Militaru, Pascal Masson, and Georges Guegan, IEEE Electron Device Lett. 23, 94 (2002).
17. Moongyu Jang, Yarkyeon Kim, Myungsim Jeon, Cheljong Choi, Inbok Baek, Seongjae Lee, and Byoungchul Park, IEEE Trans. Electron Devices 53, 1821 (2006).