Microcathodoluminescence spectroscopy of defects in Bi 2O 3-doped ZnO grains

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5072-5076

  Sun, X L ^a   Brillson, L J ^a,b   Chiang, Y M ^c   Luo, J ^c  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; COMPOSITION DEPENDENCE; DEEP LEVEL; DEEP-LEVEL DEFECTS; DOPED ZNO; DOPING CONCENTRATION; ELECTRICALLY ACTIVE DEFECTS; LOW TEMPERATURES; MICRO-CATHODOLUMINESCENCE SPECTROSCOPIES; NONSTOICHIOMETRIC; PHASE SEGREGATIONS; PROCESS CONDITION; SCANNING ELECTRON MICROSCOPE; SUBMICRON; ZNO; ZNO POWDER;

DEFECTS; GRAIN BOUNDARIES; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY;

ZINC OXIDE;

EID: 18744390341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512688     Document Type: Article

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