Deep-level transient spectroscopy in the depletion zone of boron-doped homoepitaxial diamond films

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 1041-1045

  Muret, P ^a   Saby, C ^a   Pruvost, F ^a   Deneuville, A ^a  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BAND STRUCTURE; BORON; COMPOSITION EFFECTS; DECOMPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONTACTS; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTOR JUNCTIONS;

DEPLETION ZONE; HOMOEPITAXIAL DIAMOND FILMS; MICROWAVE PLASMA DECOMPOSITION;

DIAMOND FILMS;

EID: 0033745793     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00367-2     Document Type: Article

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