Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Yakimov, E B ^a   Vergeles, P S ^a   Polyakov, A Y ^b   Smirnov, N B ^b   Govorkov, A V ^b   Lee, In Hwan ^d   Lee, Cheul Ro ^d   Pearton, S J ^c  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; DONOR CONCENTRATION; ELECTRON BEAM INDUCED CURRENT (EBIC); MICROCATHODOLUMINESCENCE (MCL);

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON BEAMS; EPITAXIAL GROWTH; SILICA;

GALLIUM NITRIDE;

EID: 34247220423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722668     Document Type: Article

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