Characterization of deep levels in n-GaN by combined capacitance transient techniques

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 572-577

  Py, M A ^a   Zellweger, Ch ^b   Wagner, V ^c   Carlin, J F ^a   Buehlmann, H J ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

^b SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

^c Micronas GmbH Freiburg   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FRANCK-CONDON SHIFT; PHOTOCAPACITANCE (PHCAP);

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 25444498870     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460431     Document Type: Conference Paper

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