Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 351-356

  Mody, Jay ^a,b   Eyben, Pierre ^b   Augendre, Emmanuel ^b,c   Richard, Olivier ^b   Vandervorst, Wilfried ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANGLE; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DOPING; SHEET RESISTANCE; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER DISTRIBUTION; CROSS-SECTION; PLANAR METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);

SCANNING ELECTRON MICROSCOPY;

EID: 38849084068     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2819254     Document Type: Article

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