Application of arsenic plasma doping in three-dimensional MOS transistors and the doping profile evaluation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2273-2278

  Kobayashi, Kei ^a   Eto, Takanori ^a   Okuyama, Kiyoshi ^a   Shibahara, Kentaro ^a   Sunami, Hideo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Beam channel transistor; Impurity enhanced oxidation; Plasma doping; SOI; Three dimensional structure

Indexed keywords

ASPECT RATIO; DOPING (ADDITIVES); ION IMPLANTATION; MOSFET DEVICES; OXIDATION; PLASMAS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

BEAM-CHANNEL TRANSISTOR; IMPURITY-ENHANCED OXIDATION; PLASMA DOPING; SOI; THREE-DIMENSIONAL STRUCTURE;

ARSENIC;

EID: 21244471473     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2273     Document Type: Conference Paper

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