Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Khajetoorians, A A ^a   Li, J ^a   Shih, C K ^a   Wang, X D ^b   Garcia Gutierrez, D ^c   Jose Yacaman, M ^c   Pham, D ^d   Celio, H ^d   Diebold, A ^d  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b APRDL   (United States)

^c The University of Texas at Austin   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; TRANSMISSION ELECTRON MICROSCOPY;

ANNULAR DARK FIELDS; CARRIER PROFILING; FIN STRUCTURES; SCANNING CAPACITANCE MICROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 33847172685     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434000     Document Type: Article

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