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Volumn 24, Issue 2, 2006, Pages 730-738

Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode

Author keywords

[No Author keywords available]

Indexed keywords

ANNULAR DARK FIELD; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING CAPACITANCE MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

EID: 33645550737     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2181574     Document Type: Article
Times cited : (4)

References (26)
  • 1
    • 33645540216 scopus 로고    scopus 로고
    • SEMATECH, Austin
    • SEMATECH, Austin, 1999.
    • (1999)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.