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Volumn 24, Issue 2, 2006, Pages 730-738
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Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode
b
APRDL
(United States)
d
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNULAR DARK FIELD;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
SCANNING CAPACITANCE MICROSCOPY;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
BORON;
COMPUTER SIMULATION;
CRYSTAL LATTICES;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ENERGY DISPERSIVE SPECTROSCOPY;
HIGH RESOLUTION ELECTRON MICROSCOPY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DOPING;
SILICON COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
FIELD EFFECT TRANSISTORS;
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EID: 33645550737
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2181574 Document Type: Article |
Times cited : (4)
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References (26)
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