Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 569-574

  Mori, M ^a   Akae, N ^a   Uotani, K ^a   Fujimoto, N ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

AFM; AlSb buffer layer; Heteroepitaxy; InSb; Si(0 0 1)

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS;

SURFACE PHENOMENA;

EID: 0038007835     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00516-6     Document Type: Conference Paper

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