Hot wall epitaxy grown n-PbTe(100)/p-Si(100) heterojunction

Journal of Crystal Growth

Volumn 165, Issue 1-2, 1996, Pages 70-74

  Yang, Yukan ^a   Li, Wenming ^a   Lu, Lei ^a   Yang, Yi ^a   Xu, Lixing ^a   Xiong, Xin ^b   Wang, Shanli ^b   Huang, Helan ^b  

^a JILIN UNIVERSITY   (China)

^b LIAONING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARACTERIZATION; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

HOT WALL EPITAXY; LEAD TELLURIDE; SINGLE CRYSTALLINITY; X RAY DIFFRACTION SPECTRUM;

HETEROJUNCTIONS;

EID: 0030564609     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00170-4     Document Type: Article

References (10)

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