MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 538-542

  Kuo, H C ^a   Yao, H H ^a   Chang, Y H ^a   Chang, Y A ^a   Tsai, M Y ^a   Hsieh, J ^a   Chang, E Y ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. Semiconducting indium compounds; B3. Optical fiber devices; B3. Vertical cavity surface emitting laser; Bl. Antimonides

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; DIFFUSION; FIBER LASERS; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

ANTIMONIDES; CONDUCTION BAND; OPTICAL FIBER DEVICES; VERTICAL CAVITY SURFACE EMITTING LASER;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 9944257884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.092     Document Type: Conference Paper

References (16)

1. M. Tan, Progress in long wavelength VCSELs, Lasers and Electro-Optics Society, 2002. The 15th Annual Meeting of the IEEE, vol. 1, 2002, pp. 269-270.
2. M. Kondow, T. Kitatani, S. Nakatsuka, M.C. Larson, K. Nakahara, Y. Yazawa, M. Okai, K. Uomi, IEEE J. Select. Topic Quantum Electron. 3 (1997) 719-730.
3. K.D. Choquette, J.F. Klem, A.J. Fischer, O. Blum, A.A. Allerman, I.J. Fritz, S.R. Kurtz, W.G. Breiland, R. Sieg, K.M. Geib, J.W. Scott, R.L. Naone, Electron. Lett. 36 (16) (2000) 1388-1390.
4. T. Takeuchi, Y.-L. Chang, M. Leary, A. Tandon, H.-C. Luan, D. Bour, S. Corzine, R. Twist, M. Tan, Electron. Lett. 38 (2002) 1438-1440.
5. M. Kawaguchi, T. Miyamoto, E. Couardes, D. Schlenker, T. Kondo, F. Koyama, K. Iga, Jpn. J. Appl. Phys. 40 (2001) L744-L746.
6. N. Tansu, L.J. Mawst, IEEE Photon. Technol. Lett. 14 (2002) 1052-1054.
7. P. Sundgren, R.M. von Wurtemberg, J. Berggren, M. Hammar, M. Ghisoni, V. Oscarsson, E. Odling, J. Malmquist, Electron. Lett. 39 (2003) 1128-1129.
8. V. Gambin, Ha Wonill, M. Wistey, Yuen Roman, S.R. Bank, S.M. Kim, J.S. Harris, IEEE J. Select. Topic Quantum Electron. 8 (2002) 795-800.
9. J.C. Harmand, L.H. Li, G. Patriarche, L. Travers, Appl. Phys. Lett. 84 (2004) 3981-3983.
10. J. Massies, N. Grandjean, V.H. Etgens, Appl. Phys. Lett. 61 (1992) 99-101.
11. J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 27 (1974) 118.
12. N. Tansu, J.Y. Yeh, L.J. Mawst, Appl. Phys. Lett. 82 (23) (2003) 4038-4040.
13. N. Tansu, Y.L. Chang, T. Takeuchi, D.P. Bour, S.W. Corzine, M.R.T. Tan, L.J. Mawst, IEEE J. Quantum Electron. 38 (6) (2002) 640-651.
14. R. People, J.C. Bean, Appl. Phys. Lett. 47 (1985) 322.
15. H.C. Kuo, Y.S. Chang, F.Y. Lai, T.H. Hsueh, L.H. Laih, S.C. Wang, Electron. Lett. 39 (14) (2003) 1051-1053.
16. J. Heiko Unold, W.Z. Safwat, R. Mahmoud Jäger, M. Grabherr, R. Michalzik, K.J. Ebeling, IEEE J. Select. Topics Quantum Electron. 7 (2000) 386-392.