Growth temperature effect on the heteroepitaxy of InSb on Si(111)

Applied Surface Science

Volumn 159, Issue , 2000, Pages 335-340

  Rao, B V ^a   Okamoto, T ^a   Shinmura, A ^a   Gruznev, D ^a   Mori, M ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES;

HETEROEPITAXY; LATTICE MISMATCH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034206762     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00074-X     Document Type: Article

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