High-mobility InSb thin films on GaAs (0 0 1) substrate grown by the two-step growth process

Journal of Crystal Growth

Volumn 267, Issue 1-2, 2004, Pages 17-21

  Debnath, M C ^a,b   Zhang, T ^a   Roberts, C ^a   Cohen, L F ^a   Stradling, R A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Two step growth; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Infrared devices

Indexed keywords

CARRIER CONCENTRATION; CURVE FITTING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INFRARED DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THICKNESS MEASUREMENT;

SEMICONDUCTING III-V MATERIALS; TWO-DIMENSIONAL GROWTH; TWO-STEP GROWTH; X-RAY ROCKING CURVE;

THIN FILMS;

EID: 2942607956     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.033     Document Type: Article

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