Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(0 0 1) heterostructures studied by analytical transmission electron microscopy

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 335-342

  Kong, X ^a   Trampert, A ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A. Quantum wells; A. Semiconductors; C. Electron energy loss spectroscopy; C. Electron microscopy

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITION FLUCTUATIONS; SPATIAL ELEMENT DISTRIBUTION;

HETEROJUNCTIONS;

EID: 38749116209     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.11.025     Document Type: Article

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