GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1845-1847

  Tournie E ^a,c   Pinault, M A ^a   Laugt M ^a   Chauveau, J M ^b   Trampert, A ^b   Ploog, K H ^b  

^a CNRS   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037464209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563062     Document Type: Article

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