Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5840 PART I, Issue , 2005, Pages 81-90

  Ulloa, J M ^a   Hierro, A ^a   Montes, M ^a   Miguel Sanchez J ^a   Guzman A ^a   Damilano, B ^b   Barjon, J ^b   Hugues, M ^b   Duboz, J Y ^b   Massies, J ^b   Trampert, A ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CNRS   (France)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Carrier localization; GaInNAs; InGaAsN; Laser diodes; Light emitting diodes; Quantum wells

Indexed keywords

ELECTRIC CURRENTS; GROWTH KINETICS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LOCALIZATION; DELOCALIZATION TEMPERATURES; GAINAS; INGAASN;

LIGHT EMITTING DIODES;

EID: 28344446995     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.608369     Document Type: Conference Paper

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