Modification of boundaries conditions in the FDTD algorithm for EUV masks modeling

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 890-899

  Vial, Alexandre ^a   Erdmann, Andreas ^a   Schmoeller, Thomas ^b   Kalus, Christian ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b SIGMA C   (Germany)

Author keywords

EUV Mask modeling; FDTD

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; FINITE DIFFERENCE METHOD; LIGHT REFLECTION; MULTILAYERS; TIME DOMAIN ANALYSIS; ULTRAVIOLET DEVICES;

REFLECTIVE MULTILAYERS;

MASKS;

EID: 0036458888     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476992     Document Type: Conference Paper

References (18)

1. P. Schiavone, G. Granet, and J. Robic, "Rigorous electromagnetic simulation of EUV masks: influence of the absorber properties," Microelectron. Eng. 57-58, pp. 497-503, September 2001.
2. T. Pistor, K. Adam, and A. Neureuther, "Rigorous simulation of mask corner effects in extreme ultraviolet lithography," J. Vac. Sci. Technol. B 16(6), pp. 3449-3455, 1998.
3. T. Pistor and A. Neureuther, "Extreme ultraviolet mask defect simulation," J. Vac. Sci. Technol. B 17(6), pp. 3019-3023, 1999.
4. T. Pistor and A. Neureuther, "Calculating aerial images from EUV masks," Proc. SPIE 3676, pp. 679-696, 1999.
5. T. Pistor, Y. Deng, and A. Neureuther, "Extreme ultraviolet mask defect simulation: Low-profile defects," J. Vac. Sci. Technol. B 18(6), pp. 2926-2929, 2000.
6. R. Gordon and C. Mack, "Mask topography simulation for EUV lithography," Proc. SPIE 3676, pp. 283-297, 1999.
7. C. Krautschik, M. Ito, I. Nishiyama, and K. Otaki, "Impact of the EUV mask phase response on the assymmetry of Bossung curves as predicted by rigourous EUV mask simulations" Proc. SPIE 4343, pp. 392-401, 2001.
8. C. Krautschik, M. Ito, and T. Mori, "Quantifying EUV imaging tolerances for the 70,50, and 35 nm nodes through rigorous aerial image simulations," Proc. SPIE 4343, pp. 524-534, 2001.
9. S. Bollepalli, M. Khan, and F. Cerrina, "Modeling image formation in layered structures: application to X-ray lithography," MSM Conference Proceeding, pp. 53-58, 1998.
10. B. Bollepalli, M. Khan, and F. Cerrina, "Imaging properties of the extreme ultraviolet mask," J. Vac. Sci. Technol. B 16(6), pp. 3444-3448, 1998.
11. B. Bollepalli, M. Khan, and F. Cerrina, "Image formation in extreme ultraviolet lithography and numerical aperture effects," J. Vac. Sci. Technol. B 17(6), pp. 2992-2997, 1999.
12. H. Chen and L. Wang, "Simulation on a new reflection type attenuated phase shifting for extreme ultraviolet lithography" Proc. SPIE 3676, pp. 578-586, 1999.
13. A. Erdmann and C. Friedrich, "Rigorous diffraction analysis for future mask technology," Proc. SPIE 4000, pp. 684-694, 2000.
14. C. Friedrich, L. Mader, A. Erdmann, S. List, R. Gordon, C. Kalus, U. Griesinger, R. Pforr, J. Mathuni, G. Ruhl, and W. Maurer, "Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling," Proc. SPIE 4000, pp. 1323-1335, 2000.
15. A. Erdmann, "Topography effects and wave aberrations in advanced psm technology," Proc. SPIE 4346, pp. 345-355, 2001.
16. A. Taflove, Computational electrodynamics: the Finite-Difference Time-Domain method, Artech House Publishers, 1995.
17. A. Taflove, Advances in Computational Electrodynamics: the Finite-Difference Time-Domain method, Artech House Publishers, 1998.
18. J. Vigoureux and F. Baida, "Critical size of multi-resonant optical tunnel structures. Application to non-radiative effects," Optics Communication 101, pp. 297-302, 1993.