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Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits

(5) Fukumoto, Yoshiyuki a Nebashi, Ryusuke a Mukai, Tomonori a Tsuji, Kiyotaka a Suzuki, Tetsuhiro a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; FERROMAGNETIC MATERIALS; RANDOM ACCESS STORAGE;

DIRECT SWITCHING PROBABILITY; MAGNETIC TUNNEL JUNCTIONS; TOGGLE-WRITING CHARACTERISTICS;

TUNNEL JUNCTIONS;

EID: 38149136570 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2826744 Document Type: Article

Times cited : (7)

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