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Volumn 80, Issue 13, 2002, Pages 2335-2337
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Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
APPLIED MAGNETIC FIELDS;
FIELD AMPLITUDES;
FREE LAYERS;
MAGNETIC TUNNEL JUNCTION;
PULSE DURATIONS;
SUBMICRON;
SWITCHING PROBABILITY;
THERMAL ACTIVATION;
THERMALLY ACTIVATED;
MAGNETIC DEVICES;
MAGNETIC FIELDS;
MRAM DEVICES;
RANDOM ACCESS STORAGE;
TUNNEL JUNCTIONS;
MAGNETIZATION REVERSAL;
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EID: 79956002595
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1462872 Document Type: Article |
Times cited : (89)
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References (13)
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