메뉴 건너뛰기




Volumn 80, Issue 13, 2002, Pages 2335-2337

Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; FIELD AMPLITUDES; FREE LAYERS; MAGNETIC TUNNEL JUNCTION; PULSE DURATIONS; SUBMICRON; SWITCHING PROBABILITY; THERMAL ACTIVATION; THERMALLY ACTIVATED;

EID: 79956002595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462872     Document Type: Article
Times cited : (89)

References (13)
  • 6
    • 0000804930 scopus 로고
    • zpc ZPCFD2 0170-9739
    • S. Arrhenius, Z. Phys. Chem. 4, 226 (1889); zpc ZPCFD2 0170-9739
    • (1889) Z. Phys. Chem. , vol.4 , pp. 226
    • Arrhenius, S.1
  • 10
    • 0000050688 scopus 로고
    • jaJAPIAU 0021-8979
    • P. Gaunt, J. Appl. Phys. 59, 4129 (1986). jap JAPIAU 0021-8979
    • (1986) J. Appl. Phys. , vol.59 , pp. 4129
    • Gaunt, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.