Effect of structures of NiFe-based free layers on writing properties in toggle MRAMs

IEEE Transactions on Magnetics

Volumn 43, Issue 6, 2007, Pages 2343-2345

  Fukumoto, Yoshiyuki ^a   Kasai, Naoki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

AlO; MgO; MTJ; NiFe; Orientation; Synthetic antiferromagnet (SAF); Toggle MRAM; Writing field

Indexed keywords

AMORPHOUS ALLOYS; CRYSTAL ORIENTATION; MAGNETIC STORAGE; NICKEL ALLOYS; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE;

SYNTHETIC ANTIFERROMAGNET (SAF); THERMAL ROBUSTNESS; WRITING FIELDS;

MAGNETIC FILMS;

EID: 34249066686     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893522     Document Type: Article

References (9)

1. J. M. Slaughter et al., "High speed toggle MRAM with MgO-based tunnel junctions," in IEDM Tech. Dig., Dec. 2005, pp. 873-876.
2. D. C. Worledge, "Spin flop switching for magnetic random access memory," Appl. Phys. Lett., vol. 84, pp. 4559-4561, May 2004.
3. 100-x/Al-Oxide/Ta free layer," Jpn. J. Appl. Phys., vol. 45, no. 5A, pp. 3829-3834, May 2006.
4. H.-J. Kim et al., "Development of magnetic tunnel junction for toggle MRAM," IEEE. Trans. Magn., vol. 41, no. 10, pp. 2661-2663, Oct. 2005.
5. Y. Fukumoto et al., "Large exchange coupling in synthetic antiferromagnet with ultrathin seed layer," IEEE. Trans. Magn., vol. 42, no. 10, pp. 2636-2638, Oct. 2006.
6. Y. Fukumoto et al., "Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers," Appl. Phys. Lett., vol. 89, pp. 061909-061911, Aug. 2006.
7. T. Suzuki et al., "Analysis for toggling magnetic random access memories with low writing field using four ferromagnetic layers for free layer stack," J. Appl. Phys., vol. 101, pp. 023906-1-023906-5, Jan. 2007.
8. S. V. Pietambaram et al., "Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAM," IEEE, Trans. Magn., vol. 40, no. 4, pp. 2619-2621, Jul. 2004.
9. J. A. Janeskey, B. N. Engel, N. D. Rizzo, and J. M. Slaughter, "Synthetic antiferromagnetic structure for magnetoelectronic devices," U.S. Patent 6 898 112, May 24, 2005.