Writing properties of clad lines in a toggle MRAM

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages

  Miura, S ^a   Shimura, K ^a   Ohshima, N ^a   Nebashi, R ^a   Suzuki, T ^a   Hada, H ^a   Tahara, S ^a   Aikawa, H ^b   Ueda, T ^b   Kajiyama, T ^b   Asao, Y ^b  

^a NEC CORPORATION   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Clad line; MRAM; Toggle memory

Indexed keywords

MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; RANDOM ACCESS STORAGE;

CLAD LINE; MRAM; SWITCHING CURRENT; TOGGLE MEMORY;

CLAD METALS;

EID: 33847646199     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.974     Document Type: Article

References (5)

1. Engel B.N., et al. IEEE Trans. Nanotechnol. 1 (2002) 32
2. Savtchenko L., et al. US Patent (2003) 6546906B1
3. M. Motoyoshi, et al. in: Symposium VLSI Technology Digest Technical Papers, 2004, p. 22.
4. Durlam M., et al. in: Symposium VLSI Technology Digest Technical Papers (2002) p. 158
5. Asao Y., et al. IEDM Tech. Dig. (2004) 571