MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 24-25

  Ha, Y K ^a   Lee, J E ^a   Kim, H J ^a   Bae, J S ^a   Oh, S C ^a   Nam, K T ^a   Park, S O ^a   Lee, N I ^a   Kang, H K ^a   Chung, U In ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DEMAGNETIZATION; FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; RANDOM ACCESS STORAGE; STATISTICAL METHODS; SWITCHING; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC SWITCHING; SWITCHING FIELDS; SYNTHETIC ANTI-FERROMAGNETIC (SAF) FREE LAYERS;

MAGNETIC STORAGE;

EID: 4544388629     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345371     Document Type: Conference Paper

References (6)

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