Analysis for toggling magnetic random access memories with low writing field using four ferromagnetic layers for free layer stack

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Suzuki, T ^a   Fukumoto, Y ^a   Ishiwata, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIFERROMAGNETIC MATERIALS; MAGNETIC THIN FILMS; SOFT MAGNETIC MATERIALS; SPIN DYNAMICS;

ANTIFERROMAGNETIC COUPLING (AFC); FERROMAGNETIC COUPLING STRENGTH; MAGNETIC RANDOM ACCESS MEMORIES; SYNTHETIC ANTIFERROMAGNET (SAF);

RANDOM ACCESS STORAGE;

EID: 33847747036     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424408     Document Type: Article

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