90nm Toggle MRAM array with 0.29μm2 cells

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 186-187

  Durlam, M ^a   Andre, T ^a   Brown, P ^a   Calder, J ^a   Chan, J ^a   Cuppens, R ^c   Dave, R W ^a   Ditewig, T ^c   DeHerrera, M ^a   Engel, B N ^a   Feil, B ^a   Frey, C ^b   Galpin, D ^b   Garni, B ^a   Grynkewich, G ^a   Janesky, J ^a   Kerszykowski, G ^a   Lien, M ^a   Martin, J ^a   Nahas, J ^a   Nagel, K ^a   Smith, K ^a   Subramanian, C ^a   Sun, J J ^a   Tamim, J ^b   Williams, R ^a   Wise, L ^a   Zoll, S ^b   List, F ^c   Fournel, R ^b   Martino, B ^a   Tehrani, S ^a   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b STMICROELECTRONICS   (Italy)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

1-TRANSISTOR 1-MAGNETIC TUNNEL JUNCTION (1T1MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MEMORY CELLS; TOGGLE SWITCHING MODE;

ARRAYS; MAGNETORESISTANCE; SWITCHING; TRANSISTORS; TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 32944480696     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469261     Document Type: Conference Paper

References (3)

1. T. Andre, J. Nahas, et al, "A 4Mb 0.18um 1T1MTJ Toggle MRAM Memory", ISSCC, 2.3, Feb. 2004.
2. B.N. Engel, et al, "A 4-Mbit Toggle MRAM Based on a Novel Bit and Switching Method" MMM-Intermag, GE-05, 2004
3. M. Durlam, et al., "A 0.18μm 4Mb Toggling MRAM", IEDM 2003 Proceedings, 34.6, Dec. 2003.