Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Fukumoto, Yoshiyuki ^a   Suzuki, Tetsuhiro ^a   Mori, Kaoru ^a   Honjo, Hiroaki ^a   Igarashi, Chuji ^a   Ohshima, Norikazu ^a   Miura, Sadahiko ^a   Ishiwata, Nobuyuki ^a   Tahara, Shuichi ^a   Asao, Yoshiaki ^b   Yoda, Hiroaki ^b  

^a NEC CORPORATION   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; HAFNIUM COMPOUNDS; MAGNETIC MATERIALS; MULTILAYERS; TUNNEL JUNCTIONS;

ANTIPARALLEL CONFIGURATION; CONVENTIONAL BILAYERS; MAGNETIC TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 33646786479     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173962     Document Type: Article

References (9)

1. M. Durlam, Tech. Dig. - Int. Electron Devices Meet. 2003, 995.
2. B. N. Engel, IEEE Trans. Magn. 41, 132 (2005).
3. S. S. P. Parkin, N. More, and K. P Roche, Phys. Rev. Lett. 64, 2304 (1990).
4. K. Ounadjera, A. Arbaouni, A. Herr, R. Poinsot, A. Dinia, D. Muller, and P. Panissod, J. Magn. Magn. Mater. 104-107, 1896 (1992).
5. P. J. H. Bloemen, H. W. van Kesteren, H. J. M. Swagten, and W. J. M. de Jonge, Phys. Rev. B 50, 13505 (1994).
6. T. Suzuki, VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on 14-16, June 2005, pp. 188-189.
7. S. V. Pietambaram, J. Janesky, R. W. Dave, J. J. Sun, G. Steiner, and J. M. Slaughter, IEEE Trans. Magn. 40, 2619 (2004).
8. P. Bruno and C. Chappert, Phys. Rev. Lett. 67, 1602 (1991).
9. M. D. Stiles, Phys. Rev. B 48, 7238 (1993).