Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-x Six Si heteronanocrystals

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Lu, Jin ^a   Zuo, Zheng ^a   Chen, Yubin ^a   Shi, Yi ^a   Pu, Lin ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; ETCHING; GERMANIUM COMPOUNDS; SILICON COMPOUNDS; ULTRATHIN FILMS; VALENCE BANDS; VOLTAGE MEASUREMENT;

BAND OFFSET; HETERONANOCRYSTALS; ULTRATHIN TUNNEL OXIDE;

NANOCRYSTALS;

EID: 38049005851     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828693     Document Type: Article

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