Nonvolatile memory devices with NiSi 2/CoSi 2 nanocrystals

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 1, 2007, Pages 339-343

  Yeh, P H ^a   Chen, L J ^a   Liu, P T ^b   Wang, D Y ^c   Chang, T C ^d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Electronics Reaserch Service Organization Industrial Technology Reaserch Institude   (Taiwan)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

CoSi 2; HfO 2 Layer; Nanocrystals; NiSi 2; Nonvolatile Memory Devices

Indexed keywords

METAL-OXIDE SEMICONDUCTOR (MOS); NON VOLATILE MEMORY (NVM) DEVICES;

METALS;

DATA STORAGE EQUIPMENT;

COBALT; HAFNIUM; NANOMATERIAL; NANOPARTICLE; NICKEL; OXIDE; SILICATE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; DATA STORAGE DEVICE; INFORMATION RETRIEVAL; SEMICONDUCTOR; TIME; TRANSMISSION ELECTRON MICROSCOPY;

COBALT; COMPUTER STORAGE DEVICES; CRYSTALLIZATION; HAFNIUM; INFORMATION STORAGE AND RETRIEVAL; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; NANOSTRUCTURES; NICKEL; OXIDES; SEMICONDUCTORS; SILICATES; TIME FACTORS;

EID: 34447330182     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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