Observation of deep-level centers in 4H-silicon carbide metal oxide semiconductor field effect transistors by spin dependent recombination

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1011-1014

  Dautrich, Morgen S ^a   Lenahan, Patrick M ^a   Lelis, Aivars J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Deep level traps; Magnetic resonance; MOSFET; Point defects; Silicon vacancy

Indexed keywords

ELECTRON TRAPS; MAGNETIC RESONANCE SPECTROSCOPY; POINT DEFECTS; SPIN FLUCTUATIONS; VACANCIES;

DEEP LEVEL TRAPS; INTERFACE DEFECTS; SILICON VACANCY; SPIN DEPENDENT RECOMBINATION;

MOSFET DEVICES;

EID: 37849007597     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1011     Document Type: Conference Paper

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